NTR4170NT1G
Manufacturer:
On Semiconductor
Mfr.Part #:
NTR4170NT1G
Datasheet:
Description:
MOSFETs SOT-23-3 SMD/SMT N-Channel number of channels:1 480 mW 30 V Continuous Drain Current (ID):2.4 A 4.76 nC
| Parameter | Value |
|---|---|
| Length | 3.04 mm |
| Width | 1.4 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 55 MΩ |
| Height | 1.01 mm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Max Power Dissipation | 780 mW |
| Power Dissipation | 480 mW |
| Threshold Voltage | 1 V |
| Number of Channels | 1 |
| Input capacitance | 432 pF |
| Continuous Drain Current (ID) | 2.4 A |
| Rds On Max | 55 mΩ |
| Drain to Source Voltage (Vdss) | 30 V |
| Turn-On Delay Time | 6.4 ns |
| Turn-Off Delay Time | 15.1 ns |
| Element Configuration | Single |
| Fall Time | 3.5 ns |
| Rise Time | 9.9 ns |
| Gate Charge | 4.76 nC |
| Drain to Source Resistance | 50 mΩ |
| Max Junction Temperature (Tj) | 150 °C |
| Nominal Vgs | 1 V |
| Gate to Source Voltage (Vgs) | 12 V |
| Drain to Source Breakdown Voltage (Vds) | 30 V |
| Schedule B | 8541210080 |
| Gate to Source Threshold Voltage | 600 mV |
| FET Type(Transistor Polarity) | N-Channel |
Stock: 6069
Distributors
pcbx
pcbxUnit Price$0.13565
Ext.Price$0.13565
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.13565 | $0.13565 |
| 10 | $0.12104 | $1.21040 |
| 50 | $0.10800 | $5.40000 |
| 100 | $0.09569 | $9.56900 |
| 500 | $0.08478 | $42.39000 |
| 1000 | $0.08086 | $80.86000 |
| 3000 | $0.07713 | $231.39000 |
| 5000 | $0.07291 | $364.55000 |